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Silicon carbide and Epitaxial Graphene: Electronic Properties

Monolithischer Graphen-Transistor

2MV-Beschleuniger zur Implantation von Punktdefekten

Einheitszelle von 4H-Siliziumkarbid

Wellenfunktion in der Graphen-Doppellage

Due to its outstanding physical properties, silicon carbide (SiC) is suitable as a semiconductor material for high-performance devices that can operate under extreme conditions (high electrical voltage, high electrical power, high temperatures, ...). Graphene, which is an atomically thin layer of the carbon material graphite, is as a metal also one of the outstandingly robust materials. We grow it on the surface of silicon carbide.

We investigate the novel metallic properties of graphene, the semiconductor properties of SiC (especially the influence of defects and dopants) and the combined metal/semiconductor system. For our experiments, we fabricate custom devices ourselves. We continue to exploit the outstanding properties of SiC for novel functionalities beyond electronics.

In doing so, we successfully collaborate with various regional and international research institutions, but also with industrial companies.

Projects:

Term: since December 1, 2013
Funding source: DFG-Einzelförderung / Sachbeihilfe (EIN-SBH)
Project leader: Heiko B. Weber

We propose a concept to build electronic devices and circuits employing the material system "epitaxial graphene on SiC". This material system consists of graphene, silicon carbide, and the epitaxially defined interface in between. We have already demonstrated the functionality of a single transistor that used the semiconductor as channel and consequently displayed excellent on/off ratios, in contrast to pure graphene transistors. Moreover, the usage of graphene as contact material delivers super…

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Contact Persons:

Heiko B. Weber
Michael Krieger

Participating Scientists:

Heiko B. Weber
Michael Krieger

Publications:

2023

Lehmeyer J., Citak T., Weber HB., Krieger M.:
Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques
In: Electronics Letters (2023), Article No.: e12752
ISSN: 0013-5194
DOI: 10.1049/ell2.12752

2022

Kodolitsch E., Sodan V., Krieger M., Weber HB., Tsavdaris N.:
Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
In: Materials Research Express 9 (2022), Article No.: 125901
ISSN: 2053-1591
DOI: 10.1088/2053-1591/acaa1f

2021

Krieger M., Weber HB.:
Epitaxial Graphene on silicon carbide as a tailorable metal-semiconductor interface
In: Peter Wellmann, Noboru Ohtani, Roland Rupp (ed.): Wide Bandgap Semiconductors for Power Electronics, Weinheim: Wiley VCH, 2021, p. 249 - 270
ISBN: 978-3-527-34671-4
DOI: 10.1002/9783527824724.ch10

2019

Hauck M., Lehmeyer J., Pobegen G., Weber HB., Krieger M.:
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
In: Communications Physics 2 (2019), p. 5
ISSN: 2399-3650
DOI: 10.1038/s42005-018-0102-8

2017

Shallcross S., Sharma S., Weber HB.:
Anomalous Dirac point transport due to extended defects in bilayer graphene
In: Nature Communications 8 (2017), p. 342
ISSN: 2041-1723
DOI: 10.1038/s41467-017-00397-8
URL: https://www.nature.com/articles/s41467-017-00397-8

2015

Kißlinger F., Ott C., Heide C., Kampert E., Butz B., Spiecker E., Shallcross S., Weber HB.:
Linear magnetoresistance in mosaic-like bilayer graphene
In: Nature Physics 11 (2015), p. 650-+
ISSN: 1745-2473
DOI: 10.1038/NPHYS3368

2014

Butz B., Dolle C., Niekiel F., Weber K., Waldmann D., Weber HB., Meyer B., Spiecker E.:
Dislocations in bilayer graphene
In: Nature 505 (2014), p. 533-537
ISSN: 0028-0836
DOI: 10.1038/nature12780

2012

Hertel S., Waldmann D., Jobst J., Albert A., Albrecht M., Krieger M., Reshanov S., Schöner A., Weber HB.:
Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
In: Nature Communications 3 (2012), p. 957
ISSN: 2041-1723
DOI: 10.1038/ncomms1955